PART |
Description |
Maker |
SKW20N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
APT20GS60SRDQ1 APT20GS60SRDQ1G APT20GS60BRDQ1 APT2 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
SGW30N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SKB15N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
SIGC42T60UN |
High Speed IGBT Chip in NPT-technology positive temperature coefficient easy paralleling
|
Infineon Technologies AG
|
IXDP20N60BD1 IXDP20N60B |
IGBT Discretes: NPT IGBT High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120 |
IGBT Discretes: NPT IGBT High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
IXDN75N120 L209 |
High Voltage IGBT IGBT Discretes: NPT IGBT From old datasheet system High Voltage IGBT 150 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation] IXYS, Corp.
|
APT11GF120BRDQ1 APT11GF120BRDQ1G |
FAST IGBT & FRED Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-247 [B]; BV(CES) (V): 1200; VCE(sat) (V): 3; IC (A): 11; 25 A, 1200 V, N-CHANNEL IGBT, TO-247AC
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|
APT150GT120JR |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
HGT1S11N12 HGTG11N120CN HGT1S11N120CNS HGTP11N120C |
From old datasheet system 43A 1200V NPT Series N-Channel IGBT 43A/ 1200V/ NPT Series N-Channel IGBT 43A, 1200V, NPT Series N-Channel IGBT(43A, 1200V NPT系列N沟道绝缘栅双极型晶体 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|